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| SIPMOS (R) Power Transistor BUZ 72AL * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 100 V ID 9A RDS(on) 0.25 Package BUZ 72 AL TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C ID A 9 Pulsed drain current TC = 25 C IDpuls 36 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 L = 885 H, Tj = 25 C 10 7.9 mJ 59 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 C 20 Class 1 V Ptot W 40 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 C 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 A Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 C VDS = 100 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 5 V, ID = 5 A 0.15 0.25 Data Sheet 2 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS 2 * ID * RDS(on)max, ID = 5 A gfs S 5 7.5 pF 680 900 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 180 250 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 90 150 ns Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 tr 20 30 Rise time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 td(off) 85 130 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 tf 100 130 Fall time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 - 55 70 Data Sheet 3 05.99 BUZ 72AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 9 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 36 V Inverse diode forward voltage VGS = 0 V, IF = 20 A trr 1.2 1.5 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Qrr 180 nC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s - 460 - Data Sheet 4 05.99 BUZ 72AL Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 10 A 45 W Ptot 35 30 ID 8 7 6 25 5 20 4 15 3 10 5 0 0 2 1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 t = 36.0s p K/W A / DS I D ID 10 1 DS (o n) 100 s R = V ZthJC 10 0 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 10 -2 DC single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 72AL Typ. output characteristics ID = (VDS) parameter: tp = 80 s 20 A VGS [V] Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.80 g a b c d Ptot = 40W l kj i h RDS (on) 0.60 ID 16 14 12 10 8 6 4 2 0 0.0 c ab e a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 fb c d e f g h i j 0.50 0.40 0.30 dk l 0.20 0.10 VGS [V] = a 3.0 2.5 2.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 e g fj ih 1.0 2.0 3.0 4.0 5.0 V 7.0 0.00 0 2 4 6 8 10 12 14 A 17 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 30 A 26 ID parameter: tp = 80 s, V DS2 x ID x RDS(on)max 12 S 10 gfs 24 22 20 18 16 14 12 10 8 6 9 8 7 6 5 4 3 2 4 2 0 0 1 0 1 2 3 4 5 6 7 8 V VGS 10 0 4 8 12 16 20 A ID 28 Data Sheet 6 05.99 BUZ 72AL Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 5 A, VGS = 5 V 0.80 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 0.60 VGS(th) 3.6 3.2 0.50 2.8 2.4 0.40 98% 98% 2.0 0.30 1.6 0.20 typ typ 2% 1.2 0.8 0.10 0.4 0.00 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 parameter:V GS = 0V, f = 1MHz 10 2 nF C A IF 10 1 Ciss 10 1 Coss 10 0 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 72AL Avalanche energy EAS = (Tj) parameter: ID = 10 A, VDD = 25 V RGS = 25 , L = 885 H 60 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 15 A 16 V 50 EAS 45 40 VGS 12 10 35 30 25 6 20 15 10 2 5 0 20 0 40 60 80 100 120 C 160 0 10 20 30 40 nC 55 4 8 0,2 V DS max 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99 |
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